Heteroepitaxial diamond film formed on Si(OOl) wafer

【摘要】 <正> Single-crystal diamond films that are necessary for electronic device applications have only been grown homoepitaxially on diamond substrates. Although the heteroep-itaxial growth of single-crystal diamond films is still a challenge for today’s scientists, it is the most hopeful way to success. There is some evidence that diamond can be grown epitaxially on μm-sized cubic boron nitride (c-BN) crystals. However, Si is the most hopeful material for heteroepitaxial growth. The high lattice mismatch between更多还原