【摘要】 文中主要讨论GaN背景载流子浓度和掺杂问题,以及GaN-based异质结构与器件应用,在结论中给出了进一步深入研究的几个主要问题。更多还原

【Abstract】 The concentration of background carriers and dopping of GaN epilayer and the heterostructures and device applications are discussed. In the last summary, future prospects in need of research are discussed too.更多还原