【摘要】 本文在详细分析各种不同条件下全耗尽ＭＯＳＦＥＴ单晶体管Ｌａｔｃｈ效应测试结果的基础上，较为详细地讨论了单晶体管Ｌａｔｃｈ效应的物理机理，发现单管Ｌａｔｃｈ效应与ＭＯＳＦＥＴ的寄生双极晶体管有着极其密切的关系，最后还给出了相应的改进措施。更多还原

【Abstract】 On the basis of the analysis ofmeasurement results offulldepletedMOSFET, the mechanism of single transistor latch effect was detailed to discuss. The single transistor latch effect is causedbythe parasitic bipolar transistor. At last, the methods to reduce the latch effect was obtained.更多还原