【摘要】 在ＳＯＩ材料上采用钴（Ｃｏ）自对准硅化物技术，研究了减薄后的ＳＯＩ上钻溅射厚度的优化问题，着重分析了在硅膜厚度一定时钴膜厚度改变、钴膜厚度不变而硅膜厚度变化对硅化物形成后薄层电阻的影响。实验表明，采用ＴＣｏ：ＴＳｉ≈１：３．６的近似方法优化粘膜厚度，会得到薄层电阻最低的硅化接触，改善其接触特性。更多还原

【Abstract】 The optimization of refractory metal(Co)thickness is studied when using SALICIDE techndogy in CMOS/SOI process,emphasizing on the influence of Co thickness and Si thickness on silicide sheet resistance,respectively.The experimental results show that Co metal thickness nust be controlled when Sithickness of SOI is limited with TCo:TSi=1:3.6 as the optimized Co thickness.更多还原