【摘要】 用高能质子激发单元素靶或化合物靶产生的特征X射线源,系统地测量了1.486—15.165千电子伏能区里硅烷和8.041—29.109千电子伏能区里硅元素的质量衰减系数.不仅在实验上验证了布喇格相加规则在气体化合物中的适用性,而且得到了1.4一6千电子伏能区里硅元素的质量衰减截面,从而填补了硅元素在该能区的数据空白.从实验测得的总截面中减去康普顿散射和漫散射截面,便得到硅元素的光电截面值,并与理论值进行了比较.更多还原

【Abstract】 With X-rays produced by protons exciting elemental and compound targets the mass attenuation coefficients have been systematicaJly measured for SiH4 in the range of X-ray energy 1.486-15.165keV, for Si in 8.041-29.109keV. Not only the validity of Bragg’s additivity law in the gaseous compound was verifed by experiment, but also the mass attenuation coefficients of Si in the energy range 1.4-6 keV were obtained. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results.更多还原