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CaAs（100）的（NH₄）₂S_x和P₂S₅/（NH₄）₂S_x表面钝化

SURFACE PASSIVATION EFFECTS OF GaAs WITH （NH₄）₂S_x and P₂S₅/（NH₄）₂S_x

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【Author】 CHEN wei-DE JIN GAO-LONG GAO ZHI-QIANG CUI YU-DE DUAN LI-HONG1)(Institute of Semiconductors, Acadcmia Sinica, Beijing 100083)2)(State Key Laboratory of Surface Physics, Academia Sinica, Beijing 100080)3)(lnstitute of Physics, Academia Sinica, Beijing 100080)

【机构】中国科学院半导体研究所；中国科学院表面物理国家重点实验室北京100083中国科学院表面物理国家重点实验室；北京100080；北京100083中国科学院表面物理国家重点实验室；北京100080中国科学院物理研究所；

【摘要】利用光致发光谱、X射线光电子谱和俄歇电子谱等技术研究了（NH₄）₂S_x和P₂S₅/（NH₄）₂S₅化学钝化GaAs（100）表面.结果表明,（NH₄）₂S_x中S钝化可以完全去除GaAs表面的氧化物.P₂S₅/（NH₄）₂S_x中P₂S₅对降低G₂A₅表面态密度,提高光致发光强度是有效的.钝化表面P氧化物存在对防止GaAs表面初期氧化起重要作用.更多还原

【Abstract】 Using photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, we have analysed GaAs (100) sarfaces passivated with (NH4)2Sx and P2S5/(NH4)2Sx.Sulfar passivation using (NH4)2Sx is extremely efficient in complete removal of the oxides of GaAs. P2S5 passivation using P2S5/(NH4)2S3 is confirmed to be effective in chemically passivating the GaAs surface. The results show that presence of phosphoras on sulfar passivated surface appeans to play a significant role in the resistance of the surface to ambient oxidation.更多还原