【摘要】 用高分辨率深能级瞬态谱、光照深能级瞬态谱及光电容谱方法,对不同组份的掺Te的GaAsP混晶进行了实验研究,结果表明,所有被测样品中同时存在三种施主深能级,其热发射激活能各为 0.18,0.28,0.38eV.通过仔细测量与分析它们的电学和光学性质后,认为它们是由Te施主杂质形成的三种类DX中心,可能对应于Te运动会替位施主的不同原子构形.更多还原

【Abstract】 We used high-resolution DLTS, illumination DLTS and photocapacitance spect-rascopy to study Te-doped GaAs1-xPx alloys with different compositions and observed the simultaneous existence of three kinds of deep donor levels with thermal activa. ion energies of 0.18,0.28,0.38eV respectively. After deta iled measurements and analyses on these deep levels, it was reasonable to consider that they may be three Te-related DX-like centers and correspond to different atom configurations.更多还原