【摘要】 利用同步辐射光电子能谱研究了室温下p型InP（100）表面,由于K吸附诱发的催化氮化反应过程。对于N₂/K/InP（100）体系的P2p;In4d芯能级和价带谱的研究表明:碱金属吸附于InP（100）表面可以强烈地影响其在室温下的氮化反应,K的存在极大地提高了N₂在InP（100）表面的粘附系数。由我们的实验结果和碱金属吸附于GaAs（110）,InP（110）,GaP（110）表面的研究结果可知,碱金属吸附于Ⅲ-V族半导体表面后,可以极大地提高N₂在Ⅲ-V族半导体表面的粘附系数,从而促进Ⅲ-V族半导体的氮化反应。碱金属与Ⅲ-V族半导体衬底之间存在界面反应似乎是催化氮化反应顺利进行的必要条件,这不同于碱金属对元素半导体的催化氮化反应的机制,因此由于界面反应而形成的表面缺陷在Ⅲ-V族半导体催化氮化反应过程中的作用是不可忽视的。在Ⅲ-V族半导体催化氮化反应过程中碱金属与N之间无明显的反应发生。N₂/K/InP（100）体系在催化氮化反应过程中形成了比较复杂的氮化物。碱金属对InP（100）表面的催化氮化要比其对InP（110）表面的催化氮化容易,而且形成的氮化物也比InP（110）要复杂。更多还原

【Abstract】 The effect of molecular nitrogen exposures on the surface of p-InP(l00) modi-fied by alkali-metal K at room temperature is investigated by synchrotron radiation core level and valence band photoemission spectroscopy. The adsorption of K on InP(l00) surface can strongly enhance the nitridation at room temperature. The K adsorption increased the sticking coefficient of nitrogen on InP(l00) surface. From our experimental results and the results of Soukiassian on GaAs(ll0), InP(ll0), GaP(ll0), we find that, alkali metal adsorbed on Ⅲ-Ⅴ semiconductor surface can increase the sticking coefficient of nitrogen on Ⅲ-Ⅴ semiconductor surface. In the case of K/InP(100) system, the formation of nitridation is complex. K-promoted nitridation of InP(l00) is easier than InP(110). In the process of K-promoted nitridation no reaction occurs between the K and N. In strong contrast with the alkali-metal pro-moted nitridation of elemental semiconductor where no reaction is observed, the re-action between the alkali metal adsorbate and the InP(100) substrate is found to play a essential role in the mechanism of alkali-metal-promoted nitridation of Ⅲ-Ⅴ semiconductor. The necessary reaction between the adsorbate and substrate stressed the role of surface defects in the observed nitridation.更多还原