【摘要】 用X射线光电子能谱(XPS)研究了在室温和超高真空条件下金属Ti淀积在AlN陶瓷表面上的化学反应过程.在金属Ti淀积之前,从AlN陶瓷的能谱中的Ols和Al2P的结合能可以看到因是样品的主要杂质,而且样品表面部分的Al被氧化.当样品淀积了金属Ti以后,发现刚淀积上去的Ti是氧化状态,还发现在Ti淀积的同时则Nls在高结合能处(402和406eV)出现新峰.随着Ti淀积厚度的增加,Ti低结合能的成份在增加而Al的氧化成份逐渐增加,Nls高结合能处的峰(402和406eV)也逐渐增高,更进一步成为主导地. N在高结合能处的Nls峰与它的氧化状态有关.更多还原

【Abstract】 X-ray photoelectron spectroscopy (XPS) of titanium deposition on A1N ceramic substrate at room temperature have been measured. Before deposition, the binding energies of O1s and A12p show the substrate contains oxygen as a major impurity and aluminum has oxidized partly. After deposition of titanium, it is found that the N1s splitted into two peaks (402 and 406 eV) and Ti2p corresponds to oxide state. With increasing of titanium coverage, the Ti2p was shifting to lower energy side and the peaks of N1s at higher binding energy were rising. It suggested that due to oxidation of Al and Ti in the interface of Ti/AlN ceramic, some of nitrogen atoms, tend to be bound with oxygen.更多还原