【摘要】 报道了用无水ＳｎＣｌ４和ＳｎＣｌ４·５Ｈ２Ｏ为原料，用热喷涂法制备ＳｎＯ２薄膜，在基片温度为５３０℃时，制得薄膜的Ｘ－射线，ＳＥＭ图及其光电性质．总结出含Ｈ２Ｏ的ＳｎＣｌ４制得的薄膜生长速度快，电阻率低，两者在结构上无明显差异。更多还原

【Abstract】 Tin oxide films are prepared by spray pyrolysis using anhydrous and pentahydrate (SnCl4·5H2O) tin chloride as staring material. X-ray diffraction data,SEM and the optical and electrical properties of these films are reported. The growth rate of SnO2 films prepared from SnCl4·5H2O is observed to be higher and the resistivity is lower than for films prepared from anhydrous SnCl4 and they have no variation about their structure.更多还原