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具有场板和限制环的P~+N二极管击穿特性的研究
A Study of Breakdown Characterists of P~+N Diode with Field Ring and Field Plate
【摘要】 本文从实验的角度研究了具有场板和场限制环的P+N二极管的击穿特性,给出了场环至主结的最佳间距与衬底浓度和结深的关系曲线。并从物理机制上对此进行了较深入的讨论。
【Abstract】 In this paper,we studied the breakdown characterists of P+N diode with field ring and field plate experimentally and presented the curve revealing relationship among optimal spacing between field ring and main junction, substrate density and junction depths. In addition, we discussed its physical mechanism in depth.
【关键词】 场板;
场限制环;
场环至主结最佳间距;
【Key words】 field plate; field ring; optimal spacing between field ring and main junction;
【Key words】 field plate; field ring; optimal spacing between field ring and main junction;
- 【文献出处】 微处理机 ,Microprocessors , 编辑部邮箱 ,1995年01期
- 【分类号】TN32
- 【被引频次】7
- 【下载频次】129