节点文献
EEPROM存贮单元的版图设计
Pattern Design of Memory Cells in EEPROM Circuits
【摘要】 本文阐述了浮栅EEPROM存贮单元的工作原理及图形设计的方法考虑。比较和分析了四种不同的单元图形的利弊得失以及EEPROM中低掺杂漏区(LDD)结构的图形与工艺技术。
【Abstract】 The principle of memory cells in a FLOTOX-EEPROM is described in the paper. Techniques to design patterns of the memory cell are introduced. The advantages and disadvan-tages of four different cell patterns are compared and analyzed. The structure of low draln doping for EEPROM’s is also discussed as well as the technique for LDD.
【基金】 国家微电子材料与元器件微分析中心资助
- 【文献出处】 微电子学 ,MICROELECTRONICS , 编辑部邮箱 ,1995年05期
- 【分类号】TP333.8
- 【被引频次】3
- 【下载频次】198