【摘要】 采用一维量子线阵列结构作为激活区的半导体激光器与采用二维量子阱结构激活区的常用激光器相比，具有许多优越的性能。利用能量为４０ＫｅＶ的Ｇａ＋离子注人到Ａｌ０．３Ｇａ０．７Ａｓ／ＧａＡｓ二维量子阱，再经白光快速退火，制备了线宽５００～４０ｎｍ的一维量子线并研究其光电特性。更多还原

【Abstract】 Semiconductor laser with 1-dimension quantum well active region has been found to have superior characteristics compared to conventional 2-dimension quantum well active region laser. Tile Ga+ ions with the energy of 40 KeV have been implanted to Al0.3Ga0.7As/GaAs quantum well, followed by a rapid thermal annealing, to make the quantum wire with the wire width froyn 500￣40 nm,and tile optoelectronic properties have been studied.更多还原