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Monte Carlo方法模拟低能电子在Al中的散射
MONTE CARLO SIMULATION OF LOW ENERGY ELECTRON SCATTERING IN ALUMINUM TARGET
【摘要】 基于文献[1]的工作,电子在固体中的弹性散射用Mott微分截面计算;非弹性散射分为单电子激发和等离子激发并由 Streitwolf、 Gryzinski及Quinn的截面描述.模拟了低能电子在Al块样及薄膜中的散射过程,对不同能量低能电子作用下Al的背散射系统、能谱又透射系数作了计算,结果与实验符合较好.也对背散射电子、低能损背散射电子表面分布作了计算,结果表明低能损背散射电子具有较好的空间分辨率.
【Abstract】 Based on the privious paper (1)and using the Mott cross-section by solving relativistic Dirac equation for elastic scattering, Monte Carlo simulation of low energy electron scattering in Al bulk target and film have been performed. The calculated backscattering coefficients, the energy distribution of backscattered electrons and electron transmission coefficients are in good agreement with experimental results. The spatial distribution of low-loss backscattered electrons is also calculated and exhibits a high resolution.
【Key words】 low energy electron scattering; monte carlo simulation; Backscattered electron;
- 【文献出处】 计算物理 ,Chinese Journal of Computation Physics , 编辑部邮箱 ,1995年02期
- 【分类号】O562.5
- 【被引频次】2
- 【下载频次】102