【摘要】 本文采用有机金属沉积（ＭＯＣＶＤ）法在ＣａＡｓ衬底上率先开展生长双色ＨｇＣｄＴｅ材料的研究，总结了生长ＣｄＴｅ缓冲层和隔离层、ｘ≈０．２、ｘ≈０．３的ＨｇＣｄＴｅ晶膜的工艺条件，并给出了ＨｇＣｄＴｅ双色材料的组分均匀性、厚度、表面形貌、结构和电性能。更多还原

【Abstract】 In this paper it is reported the pineering work of growing doublewaveband HgCdTe layer on the base of GaAs by MOCVD. The tech-niques of creating CdTe buffering and isolating areas and producing the HgCdTe crystal layer when x≈ 0.2 or x≈0.3 are discussed,and the specifications of mate-rial composition and its homogeneity,thickness,surface looking,structure,and electric characteristics are presented.更多还原