节点文献
用红外光弹测量功率整流管工艺中的残余应力
MEASUREMENT OF RESIDUAL STRESS IN SILICON INDUCED BY THE FABRICATION OF POWER RECTIFIER USING INFRARED PHOTOELASTICITY
【摘要】 利用红外光弹系统,采用森纳蒙特(Senarmont)补偿法,对功率整流管制备过程中扩散和镀镍工艺所引入的残余应力进行了测量和讨论.获得扩硼铝、扩磷和镀镍硅片中的应力值,并给出了残余应力在硅衬底片中的分布图.
【Abstract】 With the help of infrared photoelatic system,the residual stress induced by diffusion and nickelage process in the fabrication of power rectifier was measured and analyzed. The residual stress and stress distribution of diffusing boron-aluminium, diffusing phosphorus and plating nickel in silicon wafer were obtained by using the Senarmont compensation method.
【关键词】 整流管;
应力;
硅;
光弹性;
【Key words】 rectifier; stress; silicon photoelasticity The project supported by the Natural Science Foudation of Guangdong Province of China;
【Key words】 rectifier; stress; silicon photoelasticity The project supported by the Natural Science Foudation of Guangdong Province of China;
【基金】 广东省自然科学基金
- 【文献出处】 红外与毫米波学报 ,JOURNAL OF INFRARED AND MILLIMETER WAVES , 编辑部邮箱 ,1995年06期
- 【分类号】O434.39
- 【被引频次】1
- 【下载频次】41