【摘要】 采用ＬＰ－ＭＯＶＰＥ方法及常规器件工艺制成了ＩｎＰ：Ｆｅ肖特基势垒增强ＩｎＧａＡｓＭＳＭ光电探测器。用自建测试系统对其直流和瞬态特性进行了测试，测试结果表明，器件的击穿电压大于１０Ｖ，２Ｖ偏压下暗电流为１７０ｎＡ，对应的暗电流密度约为３ｍＡ／ｃｍ２；瞬态响应中上升时间ｔｒ为２１ｐｓ，半高宽ＦＷＨＭ为７５ｐｓ。更多还原

【Abstract】 The InGaAs MSM photodetectors with InP:Fe barrier enhancement layer have beenfabricated by using LP-MOVPE growth and normal device processing. The detectors show breakdownvoltage greater than 10V and dark current about 170nA at 2V bias(3mA/cm2).The rise time of 21psand FWHM of 75ps have been measured by using a self built transient measurement system.更多还原