【摘要】 本文利用全量子理论推导了半导体中多光子吸收跃迁速率的一般表达式。对各种模型计算了本征ＧａＡｓ在λ＝２．０６ｕｍ下的三光子吸收系数。实验上采用非线性光电导和非线性光透射技术，测量了ＧａＡｓ中三光子吸收系数。更多还原

【Abstract】 The general expression of transition rate for triphoton absorption in semiconductors istheoretically calculated by use of the all-quantum theory in this paper. The three photon absorptioncoefficients of intrinsic GaAs at 2.06pmare separately calculated for various models. Using nonlineartransmission(NLT)and nonlinear photo-conductivity(NLP)techniques,the three photon absorptioncoefficients in the GaAs is experimentally measured.更多还原