【摘要】 在（１１１）晶向的ｎ型单晶硅片上，用电化学腐蚀的方法成功地制备出多孔硅膜，室温下，在３４４ｎｍ波长的光激发时用肉眼观察到明亮的桔红色荧光（５７７ｎｍ）。研究了ＨＦ浓度，光照强度，电流密度和电化学腐蚀时间对多孔硅膜的发射波长和发光强度的影响。相应的多孔硅量子线度为１．５ｎｍ。更多还原

【Abstract】 A series of porous Si samples have been prepared successively by electro-chemical etching method on (111 ) n-type single crystal silicon.The orange-red luminescence (577urn) was observed with naked eyes under 344urn excitation at room temperature. The effects of HF concentration, light radiation,current density and electro-chemical etching time on emission wavelength and intensity of the porous St have been studied更多还原