【摘要】 用ＬＰＣＶＤ方法生长了掺Ａｓ多晶Ｓｉ薄膜，通过能谱分析，扩展电阻测量，扫描电子显微镜观测，发现用ＬＰＣＶＤ方法生长的掺Ａｓ多晶Ｓｉ可获得极高的掺Ａｓ浓度，Ａｓ对衬底材料（ＳｉＯ２或多晶Ｓｉ）具有超常的低温快扩散特性，掺Ａｓ多晶Ｓｉ经高温退火，晶粒大小有反常的变化。利用这些特性可成功地解决ＬＰＣＶＤ法生长掺Ａｓ多晶Ｓｉ所遇到的生长速度愈来愈慢，Ａｓ浓度愈来愈高，难以生长较厚掺Ａｓ多晶Ｓｉ等问题。更多还原

【Abstract】 As doped poly-Si is grown by LPCVD method. By using AES andTEM,it is found that.As doped poly-Si has an extremely high concentration of As.As can rapidly diffuse into substrate (poly-Si or SiO2)at lower temperature. Afterhigh temperature annealing,active As concentration increases. But diameter of crystalline grain reduces. By using these properties of As doped poly-Si,it is possible toachieve high deposition rate of As doped poly-Si and good control of As concentration.更多还原