【摘要】 铁电薄膜的电疲劳是铁电存储器等应用的主要障碍。我们用Ｓｏｌ－ｇｅｌ（溶胶－凝胶）方法制备的ＰＺＴ铁电薄膜，对其结构和疲劳特性的研究表明：组分及工艺因素会影响薄膜的结构，具有玫瑰花形的ＰＺＴ薄膜内部存在较多的带电缺陷。在外电场作用下１０￣６周期后出现疲劳，改进组分配方或改进热处理工艺，使薄膜为纯钙钛矿结构，薄膜的寿命可超过１０￣（１１）周期。更多还原

【Abstract】 Electric fatigue is a major obstacle forsome potential application of ferroelectric thin films,such as memory devices.Investigation of thestructure and fatigue character of PZT ferroelectricthin films prepared by sol-gel method indicated thatthe composition and the plocessing parameters hadeffect on the structure ci PZT thin films.When thePZT thin films presented rosette morphology ,thecharged defects were more.When the repeated highelectric field applied, the thin films were fatiguedafter 10￣5 switching cycles.When the PZT thin filmspossessed only perovskite structure, the switchinglifetime might exceed 10￣[11] cycles。更多还原