【摘要】 论述硅的各向同性腐蚀与各向异性腐蚀的工作原理，提出硅膜厚度的控制方法．实验中得出异向腐蚀时的最佳温度为９５℃，腐蚀速率ｖ＝１μｍ／ｍｉｎ。更多还原

【Abstract】 The operating principle of anisotropic technique and isotropic etchnique of Si are discussed. Methods are suggested on the Si diaphragm thickness to be controlled. From experiment we obtain best temperature of anisotropic etchnique T=95℃, and etchnique rate v=1μm/min and so on.更多还原