【摘要】 采用离子注入和快速退火法可制备Ｓｉ浅ｐ－ｎ结阵列，通过真空清洁处理和铯氧激活后制成阵列式Ｓｉ浅ｐ－ｎ结雪崩冷阴极，其最高电子发射效率为１６％。本文介绍阵列式Ｓｉ雪崩冷阴极的制各方法，给出了Ｓｉ冷阴极的雪崩电子发射特性，讨论了影响发射稳定性的主要因素。更多还原

【Abstract】 Arrayed cold cathodes of shallow Si p-n junctions wcre fabricated by ion implantation,rapid thermal annealing,vacuum clean treatment and cesium-oxygen activation,with the maximum electron emission efficiency of 16%.In this paper,the fabrication technology of arrayed Si cold cathodes was described,the electron emission properties of arrayed Si cold cathodes were presented,and factors affecting emission stability of arrayed Si cold cathode were discussed.更多还原