【摘要】 本文比较了以ＳｉＯ为预热层和以ＳｉＯ２／Ｙ２Ｏ３、ＳｉＯ２／Ｔａ２Ｏ５为复合预热层的新结构器件的发光亮度和传导电流，并拟合出这三种器件热电子能量，得出以ＳｉＯ为预热层的新结构器件的热电子能量和发光亮度最高，比较了以ＳｉＯ２和ＺｎＳ分别作加速层对发光和传导电荷的影响，得出在提高注入电荷方面，以ＺｎＳ做加速层优于ＳｉＯ２做加速层；在提高热电子能量和发光亮度方面，以ＳｉＯ２做加速层要好于ＺｎＳ做加速层．更多还原

【Abstract】 Accoding to the calculation of hot electron impact cross section by Shen,the blue emission could be get if the hot electron have enough energy.In order to get hot electrons of relative high energy, first we choice SiO2/Ta2O6 and SiO2/Y2O3 complex layers as preheat layer to substitute for SiO and to prepare the devices whose preheating layers were SiO2/Ta2O5,SiO2/Y2O3and SiO for samples A,B,C respectively.The electroluminescence intensity and transferred current were mesaured by using HITACH 4010 model flurescence spectrophotometer and Chen and Krupta circuit respectively.The maxmum emission intensity of C is larger one order than that of B and two order than that of A.In the mean time,the ratio among the transferred current of A and that of B and that of C is 3.9:1.8:1.0 Accoding to the following luminescence equation and experiment date,we got tile maxmum hot electron energy ill A.B,C is 0.4,0.5 and 1.5eV respectively.Then we choice ZnS and SiO2 as accerating layer,prepared the device 2603 and 2502respectively. The derivation electronluminscence intensity and transferred charge excited by different polaration voltage have been measured, The ratio between the electroluminescent intensity caused by electron accerated by SiO2 and that by ZnS is 20. 0:1.0.In the mean time,the transferred charge from ZnS side is larger than that from SiO2.Accoding to the luminescent intensity, we got the following result: the ZnS layer is prefer to provide more but low energy electrons,and SiO2 is prefer to provide smaller quantity but high energy hot electron.Till now, it is obviously that the SiO and SiO2 are accepterable preheating and accerating layer respectively in new designed devices.更多还原