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激光触发光导开关产生超短电磁脉冲的实验研究
AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
【摘要】 本文介绍了用光导开关和微带线结构产生电脉冲的实验装置,研究了激光能量和偏置电压对光导开关输出超短电脉冲的影响和三种尺寸光导开关的特性,测得了一种低掺杂Cr:GaAs材料的载流子寿命约为1.8ns,显示了这种装置用作高速光探测器的可能性。
【Abstract】 By using the apparatus given in this paper the experiment on photo-conductive switches was conducted to investigate the affection of both the laser energy and bias voltage on switch output. By means of the same set-up, the carrier lifetime of Cr: GaAs used was measured to be as 1.8ns, and the possibility of the set-up to be utilized as a high speed photodetector has been demonstrated.
【关键词】 光导开关;
激光脉冲;
超短电脉冲;
载流子寿命;
高速光探测器;
【Key words】 Photoconductive semiconductor switch; Laser pulse; Ultrashort electrical pulse; Carrier lifetime; High speed photodetector;
【Key words】 Photoconductive semiconductor switch; Laser pulse; Ultrashort electrical pulse; Carrier lifetime; High speed photodetector;
【基金】 国家自然科学基金和瞬态光学技术国家重点实验室基金联合资助课题
- 【文献出处】 电子科学学刊 , 编辑部邮箱 ,1995年04期
- 【分类号】TN248
- 【被引频次】1
- 【下载频次】50