【摘要】 本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温高速双极晶体管的优化设计作了探讨。更多还原

【Abstract】 The influences of the distribution of the base doping concentration, the magnitude and thelocaton of the base peak concentration on base transit time are studied by consideruig bandgap-narrow-ing effects and carrier freeze-out effects. Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated.更多还原