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复合电沉积法制备SiC_p/Cu复合材料的工艺研究
The Processing of SiC_p / Cu CompoSite by CompoSite Plating
【摘要】 研究了用复合电沉积法制备SiC_p/Cu复合材料的工艺。结果表明,用复合电沉积法制备颗粒增强金属基复合材料是一种切实可行的方法。当镀液中SiC颗粒含量为15g/1,电流密度为4A/dm ̄2,电镀温度15~20℃,板泵搅拌时,可获得含有20vol%SiC_p的SiC_p/Cu复合材料。
【Abstract】 he processing of SiC_p/Cu compoite by compeite plating has been investigated, The results show that it is available that the particle-reinforced com poite is preduced by the method of compcsite plating.The 20vol%SiC_p/Cu compossite can be obtained in the case of 15%SiC concentration in the plating bath,4A/dm ̄2 and 15~20℃。
- 【文献出处】 材料工程 ,JOURNAL OF MATERIALS ENGINEERING , 编辑部邮箱 ,1995年10期
- 【分类号】TB33
- 【被引频次】11
- 【下载频次】151