节点文献
硅压力传感器的新技术
New Techniques of Sillicon Pressure Sensor
【摘要】 在研制压阻式扩散硅压力传感器中,除了采用常规的平面工艺以外,还需要几项特殊的、重要的新技术、新工艺,简要地论述真空静电封接技术、异向蚀刻技术以及减少层错的三氯乙烯氧化工艺等.
【Abstract】 This paper discusses the study on piezoresistive diffuse sillicon pressure sensor. It is except sillicon planar technique for must be take to some new techniques of importance. That is welding technique of vacuum electrostatic, anisotropy etching technique, and [TCE] technique for to diminish stacking fault.
【关键词】 压力传感器;
异向蚀刻技术;
静电封接技术;
【Key words】 Pressure sensors Anisotropy etching technique Welding technique of electrostatic;
【Key words】 Pressure sensors Anisotropy etching technique Welding technique of electrostatic;
- 【文献出处】 传感器技术 ,JOURNAL OF TRANSDUCER TECHNOLOGY , 编辑部邮箱 ,1995年01期
- 【分类号】TP212
- 【被引频次】3
- 【下载频次】52