【摘要】 采取BESOI技术形成带真空腔的绝压式结构,利用凸型梁使形变膜的应力放大,研制出在电源电压5V时,具有输出灵敏度为257.4mV/10⁵Pa的绝压式负压传感器芯片.其非线性度约0.1%,未加负压时,输出电压的温漂约400×10^-6/℃（FS）.更多还原

【Abstract】 An absolute pressure structure with a vacuum cavity was formed by BESOI(Bonding and Etch-back Silicon on Insulator) technology. In order to amplify the stressa convex beam was fabricated in the middle of the deformation square film. As a result,the output sensitivity of this transducer is 257. 4 mV/×105 Pa at 5V, the nonlinearityof output voltage is less than 0. 1%, and the drift of output voltage as the temperatureis about 400 × 10-6/℃(F. S) in idling.更多还原