【摘要】 我们在Ⅰ类－Ⅱ类混合ＧａＡｓ／ＡｌＡｓ非对称量子阱结构的样品上，在较低的激发光强下在宽阱中获得了较高密度的光生电子积累．利用光致发光方法详细地研究了自由载流子散射对激子展宽的贡献，发现低温下随着载流子密度的增加，载流子散射导致的激子展宽随之增加，在一定激发光强下光荧光谱上出现７７Ｋ激子线宽大于室温激子线宽的现象．我们根据载流子对激子态的散射理论进行了计算，发现实验结果和理论预言符合得很好。更多还原

【Abstract】 Abstract We have investigated the contribution of tree carriers scattering to excitonic linewidth by low-temperature Photoluminescence on a type-I-type-Ⅱ mixed quantum wells structure. We found that when a high density of free carriers (electrons) is present, the scattering of excitons by electrons becomes very important. The scattering-induced broadening of excition linewidth is found to increase with electron concentration and to extremely broaden the exciton peak at high carrier concntrations and even make the excitoniclinewidth of 77K PL spectra larger than that of 300K PL spectra. These results can be reasonably explained by our theoretical calculations.更多还原