【摘要】 本文报道了一种用电子束蒸发制备铟基金属与ｎ型ＧａＡｓ单晶欧姆接触ＮｉＩｎ（Ｇｅ）／ｎ－ＧａＡｓ材料．其接触电阻率ρｃ对随后的热退火温度存在着典型的Ｕ型依赖关系．透射电子显微镜（ＴＥＭ）及俄歇电子能谱（ＡＥＳ）的分析结果指出ρｃ值的大小很大程度取决于ＧａＡｓ衬底与金属接触材料间ＩｎＧａＡｓ相的形成及其覆盖度．文中还对金属接触材料与砷化镓相互作用的动力学进行了讨论．更多还原

【Abstract】 Abstract A material of In-based metal,which can form ohmic contact to n-GaAs, NiIn(Ge)/n-GaAs,by means of electron-beam evaporation is reported. The relation between contact resistivity ρc and subsequent thermal anneal temperature(T)is shown as a typical U-shape dependence.The results obtained by the analysis of cross-sectional transmission electron microscopy and Auger election spectroscopy show that the contact resistivity,ρc is obviously related with the formation and the fractional coverage of InxGa1-xAs phase at the contact metal/GaAs interfaces.The kinetics of the feaction between the metal and GaAs substrate during ohmic contact formation has also been discussed.更多还原