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外延层组分界面状况的X射线双晶衍射测定

Determination of Composition and Interface Condition of Epitaxial Layer by X-Ray Double-Crystal Diffraction

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【作者】 朱南昌李润身陈京一许顺生

【Author】 Zhu Nanchang;Li Runshen; Chen Jingyi and Xu Shunsheng (Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai 200050)Received 27 April 1993, revised manuscript received 20 July 1993

【机构】 中国科学院上海冶金研究所

【摘要】 本文介绍了一种用X射线双晶衍射仪测定外延层与衬底界面状况并同时测定外延层点阵常数及组分的方法,只需测量三个衍射,并考虑了晶体表面偏离对称轴的影响.同时,引入了表征界面状态的界面共格因子,讨论了它的意义.实验结果表明:在测定大失配体系外延材料的组分时,同时测定外延层与衬底之间以及外延层与外延层之间的界面关系是必要的.

【Abstract】 Abstract The composition measurement of epitaxial layers, accompanying the determination of interfacial condition between epilayer and substrate or epilayers by X-ray doublecrystal diffraction is studied. The deviation of the surface normal from the axis of symmetry is considered and only three diffractions are needed in this measurement. In addition, a factor of interfacial coherency, fCOH is introduced to explain the relation between epilayer and substrate or epilayers. The results show that the interface condition determination is necessary for those epitaxial materials which contain large lattice mismatch components while measuring the composition by lattice constant.

【基金】 中国科学院上海冶金研究所青年基金
  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1995年01期
  • 【分类号】TN304.054
  • 【被引频次】12
  • 【下载频次】156
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