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PIN结构自扫描光电二极管列阵
Self-scanned photodiode array with PIN structure
【摘要】 从自扫描光电二极管列阵(SSPA)的工作原理出发,提出采用外延、离子注入、推阱的技术,研究一种新颖的高响应度的PIN结构的SSPA器件,详细的分析了工艺设计方案和实验方法,最后提供了样品的测试参数。
【Abstract】 The operation principle of self-scanned photodiode array(SSPA) is described firstly in this paper. By employing the epitaxy ,ion implantation and diffusion technologies ,we have fabricated a new type of SSPA device with PIN structure which has high responsibility. Process design and experimental methods are discussed in detail. The measured parameters of this type of device sample are obtained in the end of the paper.
【关键词】 图像传感器;
PIN光电二极管;
外延生长;
离子注入;
推阱技术;
【Key words】 Imaging Sensor; PIN Photodiode; Epitaxial Growth; Ion Implantation; Diffusion Technology;
【Key words】 Imaging Sensor; PIN Photodiode; Epitaxial Growth; Ion Implantation; Diffusion Technology;
【基金】 国家自然科学基金青年资金
- 【文献出处】 半导体光电 ,SEMICONDUCTOR OPTOELECTRONICS , 编辑部邮箱 ,1995年03期
- 【分类号】TN364.2
- 【被引频次】2
- 【下载频次】106