【摘要】 用因子分析法在扫描俄歇微探针（SAM）上研究了SiO2／Si的俄歇深度剖面分析。采用Ar＋离子刻蚀SiO2／Si样品，分别采录具有高表面灵敏度和化学态灵敏度的低能SiLVV俄歇跃迁和OKLL俄歇跃迁。用因子分析法可得到一致的结果：SiO2／Si界面上存在中间过渡化学态SiOx（0＜x＜2），以及SiO2经Ar＋离子刻蚀后产生少量（约10％）的SiOx及相当一部分（约30％～50％）的SiO2的另一状态SiO2*。更多还原

【Abstract】 The factor analysis of Auger spectra acquired during sputter depth profiling of SiO2/Si by using scanning Auger microprobe(SAM). Medel PHI-590 with the Ar+ ion-etching,is adopted. The chemicalstate-sensitive Auger transitions Si LVV and O KLL are analyzed with the consistent results that there is an intermediate chemical state SiOx (0＜x＜2) in the interface region,and part of SiO2 are transformed to SiOx (about 10%) and another state SiO2. (about 30%~50%) due to the Ar+ ion-etching.更多还原