【摘要】 在基片加热状态下，利用直流平面磁控反应溅射技术制备重掺杂In2O3：Sn薄膜，研究其光学及电学性能。从光谱测量出发计算了膜的折射率及消光系数，并确定了膜的有效禁带宽度为4．25eV，比未掺杂的In2O3有更宽的禁带宽度。测量In2O3：Sn．膜的霍耳系数，并从介电常数的计算获得了膜的电子浓度约1020／cm3。更多还原

【Abstract】 Heavily doped In2O3: Sn thin films have been deposited on heated subetrates by d. c planar reactive magnetron sputtering technology. We have investigated their optical and electrical properties. The optital constants n and k were talculatal by spectral transmittance and reflectance data. The band gap of the doped In2O3: Sn have been obtained from the relation of the aborption coefficient and photon energy. The doped In3O3: Sn films have a wider band gap(4. 25eV)than the undoped (3. 75eV). thegnitude of the electron density, ne,in the various films was deterhaed from Holl coefficient and dieboric ftinction. It is about 1020cm-3.更多还原