【摘要】 深扩散和表面减薄改善硅扩散结太阳电池性能的可能性张秀淼（杭州大学）关键词：太阳电池，ｐ－ｎ结，半导体．０引言前表面复合速度对硅扩散结太阳电池性能的影响已经由许多作者进行过研究￣［１～７］．早期的工作常忽略扩散杂质浓度分布引起的内建场￣［１，２］，或把...更多还原

【Abstract】 Assuming the diffused impurity profile to be Gaussian,a resolution of theminority carrier continuity equation for the diffused region thinned by etchingthe surface has been given. On the basis of that, computations and analyses havebeen made for some practical examples. It has been shown that in order to increasethe short circuit current contributed by the n￣+ diffused region, besides the lowersurface recombination velocity and lower built-in field gradient,the higher builtin field itseif is also important.In the present work it has also been shown thatmaking deeper diffusion and etching the surface are effective to increase shortcircuit current contributed by the n￣+ diffused region only if the deeper diffusionis made together with the higher surface impurity concentration.更多还原