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铁电薄膜底电极对薄膜结构与电性能的影响

EFFECT OF THE BOTTOM ELECTRODES ON THE STRUCTURE AND ELECTRIC PRO-PERTIES OF FERROELECTRIC THIN FILMS

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【作者】 卢德新李佐宜刘建设黄龙波梁俊文

【Author】 Lu DE-XIN LI ZUO-YI LIU JIAN-SHE HUANG LONG-BO LIANG JUN-WEN(Department of Solid State Electronics, Huazhong Uniuersity of Science and Technology,Wuhan 430074)

【机构】 华中理工大学固体电子学系

【摘要】 研究了电极材料(Pt/Ti)对铁电PLZT(7.5/65/35)陶瓷薄膜结构和性能的影响.认为在Pt层厚度一定时,Ti层的厚度对铁电薄膜的结构和性能有显著影响.当Ti层过厚或过薄时,铁电薄膜的结构较差;而当Ti层的厚度适中时,则铁电薄膜的显向下微结构均匀,电性能较好,典型的剩余极化强度和矫顽场分别为27.8μC·cm ̄(-2)和65.1kV·cm ̄(-1).

【Abstract】 The effect of electrode materials on the structure and electric properties offerroelectric PLZT(7.5/65/35)ceramic thin films has been investigated.It hasbeen shown that,for a certain thickness of the Pt laver,the thickness of the Tilayer has a dominant effect on the structure and electric properties of theferroele-ctric thin films.When the Ti layer was too thick or too thin,PLZT thin filmshad undesireable crystalline structure. However,with appropriate thickness of theTi layer,ferroelectric thin films of good microstructure and electric properties canbe obtained, with typical remanent polarization 27.8μ C·cm ̄(-2)and coercive field65.1kV·cm ̄(-1), respectively.

【基金】 国家高技术研究发展计划资助
  • 【文献出处】 物理学报 ,ACTA PHYSICA SINICA , 编辑部邮箱 ,1994年12期
  • 【分类号】O484.42
  • 【被引频次】14
  • 【下载频次】182
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