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硅酸铋(Bi12SiO20)晶体生长的研究进展

Progress in Study on Crystal Growth of Bismuth Silicon Oxide

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【作者】 徐学武廖晶莹

【Author】 (Bi_(12)SiO_(20))Xu Xuewu;Liao Jingying(Shanghai Institute of Ceramics, Chinese Academy of Sciences Shanghai 200050)

【机构】 中国科学院上海硅酸盐研究所

【摘要】 本文介绍了光折变晶体BSO生长研究的国内外进展.对BSO晶体生长方法、组分和结构缺陷表征、材料性能的改进等几个方面进行了综合评述.讨论了各种生长方法的优缺点以及阻碍BSO晶体批量生产的几种因素.指出坩埚下降法在实现大尺寸优质BSO晶体的批量生产方面已显示出优越性,它应该成为今后BSO晶体生长研究的一个重要发展方向.

【Abstract】 The progress in study on crystal growth of photorefractive BSO was introduced. Several aspectssuch as growth method, constitutional and structural defect, and improvement of material propertywere summarized and reviewed. The merits and demerits of various growth methods and some factorswhich hindered the mass production of BSO crystals were discussed. It is pointed out that the verticalBridgman method has many advantages in realizing the mass production of large sized BSO crystals withhigh optical quality, and it should be an important orientation of the future studying on BSO crystalgrowth.

  • 【文献出处】 无机材料学报 ,JOURNAL OF INORGANIC MATERIALS , 编辑部邮箱 ,1994年02期
  • 【分类号】O741.4
  • 【被引频次】21
  • 【下载频次】283
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