【摘要】 本文报道了一种采用串、并联FETs结构的GaAsMMIC单刀双掷开关.芯片尺寸为0.97×1.23mm.在DC—10GHz频率范围内,插入损耗小于2.2dB,隔离度大于32dB,反射损耗大于12dB,开关时间小于1ns,在5GHz下的功率处理能力大于20dBm.此开关具有极低的直流功率耗散.更多还原

【Abstract】 A monolithic microwave broadband single pole double throw (SPDT) switch empolying series and shunt GaAs FETs is present. The chip size is 0. 97 x1. 23mm. In DC-10GHz freqency range , better than 2. 2dB insertion loss. 32dB Isolation and 12dB return loss have been achived . The switch demonstates a power handling cspacity of better than 20dBm at 5GHz and a switching time less than lns . It has very low DC power dissipation .更多还原