【摘要】 对掺硼（Ｂ）材料的固相晶化进行了研究。通过对不同掺Ｂ浓度的ａ－Ｓｉ：Ｈ样品退火前后的Ｘ射线衍射、光吸收系数、电导率、激活能及Ｈａｌｌ迁移率的测量发现，Ｂ原子在固相晶化过程中起晶核作用，晶化后的样品具有较高的迁移率及电导率，同时具有较大的禁带宽度。当接Ｂ浓度仅为０．１７％时，晶化后样品的电导率为４．３５ｓｃｍ－１，迁移率为１４０ｃｍ２Ｖ－１ｓ－１，禁带宽度Ｅ０４＝２．１６ｅＶ。该材料是一种较好的太阳电池窗口材料。更多还原

【Abstract】 The effects of B atoms on the solid phase crystallization of PECVD a-Si:H films is investigated by using the X-Ray diffraction,Hall measurements.optical reflection transmission measurements and conductivity measurements.It is found that the B atoms acts as nuclei in the SPC process.The crystallized films have high conductivity and high Hall mobility. The optical band gap of the crystallized films E04=2.16.This figure is larger than that of a-SiC:H window layers.The p-type Poly-Si layers prepared by SPC method is a suitable window material for solar cell.更多还原