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溅射制备铁电薄膜及其性能测试的研究
Preparation of Ferroelectric(Pb,La)(Zr,Ti)O3 Thin Films by RF Sputtering and Their Properties
【摘要】 本文讨论了在不加温的Pt/Ti/SiO_2/Si基片上用射频磁控溅射技术制备出的铁电PLZT(7.5/65/35)薄膜,以及研制的铁电薄膜电性能测试系统。利用X射线衍射法对原位溅射和退火处理后薄膜的结构进行了分析,结果显示薄膜结晶性好,呈现钙钛矿结构。通过比较薄膜的结构,探讨了薄膜底电极对薄膜结构的影响。对退火处理后的薄膜的电性能测试结果表明,这种PLZT薄膜具有良好的铁电性能。
【Abstract】 The ferroelectric PLZT(7.5/65/35)thin films have been prepared on unheated Pt/Ti/SiO2/Si substrates by rf magnetron sputtering,and the system of measuring their properties have been studie.The structures of as- deposited and annealed thin films were obtained by the X-ray diffraction.The results show that thin films have good crystallinity and perovskite structure. The effect of the bottom electrodes on the structures of thin films is investigated by comparing the structures of thin films. The measurement of the annealed thin films shows that the PLZT thin films have good ferroelectricity.
【Key words】 ferroelectric crystal; thin film; radio frequence; sputtering; measurement of properties;
- 【文献出处】 人工晶体学报 ,JOURNAL OF SYNTHETIC CRYSTALS , 编辑部邮箱 ,1994年04期
- 【分类号】O484.5
- 【被引频次】19
- 【下载频次】168