【摘要】 介绍反应堆镉上中子辐照改性的掺铬砷化镓（ＧａＡｓ：Ｃｒ）和本征砷化镓（ＧａＡｓ）光电导探测器，研究了探测器的响应时间、粒子灵敏度及输出电流随镉上中子辐照改性注量和施加偏压的变化关系。更多还原

【Abstract】 This paper reported the modification of Gr-doped GaAs and undoped Ga As photoconductor by neutron(above Cadmium)-treated.The exporimental results showed that the relations of the response time,the sensitivity to particle,and the output current of photoconductors with neutron-treated flux and bias voltages of he detectors.更多还原