An attempt was made to prepare the Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B amorphous alloy interlayers in diffusion bonding of Si_3N_4 ceramic substrates. The amorphous Cu_(50)Ti_(50) interlayer, in comparison with the crystalline one, may improve the technological operation,reduce the diffusion bonding temperature and obviously increase the shearing strength,particularly up to 340 MPa with some B addition. It seems that the mechanism of the diffusion bonding of Si_3N_4 with Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B in...