【摘要】 利用同步辐射拍摄了长波光导多元HgCdTe探测器芯片的高分辨率的白光形貌相,观察到多元线列器件探测元中明显存在晶格应变区、亚晶界、滑移面等缺陷.实验结果表明:多元线列器件探测元的性能与其光敏区HgCdTe材料中的晶体缺陷密切相关,器件工艺对HgCdTe晶片的应力状态有极大的影响,器件工艺对材料的应力作用可从多元器件探测元晶格的完整性反映出来.更多还原

【Abstract】 High-resolution topographs of long-wave multi-element HgCdTe PC detector arrays were taken with synchrotron radiation white-beam topography. A number of crystal defects were revealed in the detecting elements of the multi-element detector arrays, such as lattice distortion zones, subgrain boundaries and slip planes. The experimental results show that there is a correlation between the performances of multi-element detector arrays and the defects in their active areas; that the stress state of HgCdTe device chips is greatly affected by device technologies; and that the lattice perfection of the detecting elements of multi-element detector arrays reflects the effect of device technologies on the stress state of HgCdTe device chips.更多还原