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In_xGa_1-xAs/GaAs应变量子阱光学性质

OPTICAL PROPERTIES OF In_xGa_1-xAs/GaAs STRAINED LAYER QUANTUM-WELLS

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【Author】 Li Feng Zhang Yaohui Jiang Desheng(National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)Wang Youxiang(Laboratory for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)

【机构】中国科学院半导体研究所；中国科学院半导体研究所半导体超晶格国家重点实验室；北京100083；半导体超晶格国家重点实验室；表面界面国家重点实验室；北京100083；

【摘要】研究了用分子束外延方法生长在GaAs（100）衬底上的In_xGa_1-xAs/GaAs（x=0.1）应变多量子阱样品,观察了其光荧光谱和光调制反射谱的光谱结构,讨论了有关基态光跃迁和激发态光跃迁性质.根据实验结果给出了能带偏移比值为Q_c=0.69（Q_v=1-Q_c=0.31）,并提出有关轻空穴束缚于GaAs层而形成Ⅱ类超晶格的重要佐证.更多还原

【Abstract】 Structures have been observed in the photoluminescence (PL) and the photoreflectance (PR) spectra of InxGa1-xAs/GaAs (x = 0.1) strained-layer multiple quantum-wells (QWs) grown by molecular-beam epitaxy on GaAs (100)-oriented substrate. The properties of the ground state transitions and the excited state transitions are discussed. The band offset ratio Qc = 0.69 (Qv = 1 - Qc = 0.31) is given based on the analysis of PL, PR experimental results. An important evidence, which indicates that the light holes are confined in the GaAs layer forming a type II superlattice, is provided.更多还原