【摘要】 用时间分辨反射率技术实时测量了Ｓｉ＋、Ａｓ＋注入单晶硅的固相外延生长速率和外延层厚度，并与背散射沟道方法测得的非晶层厚度进行了比较。介绍了测量原理，分析了实验结果．更多还原

【Abstract】 he time-resolved reflectivity(TRR) technique has been used to measure the solid phase epitaxial growth rate and the thickness of epitaxial layer for Si+ and As+implanted single crystalline wafers.The thickness of amorphous layer for the As-implanted samples has been determined by backscattering-channeling analysis to confirm the measured TRR results.The principle of the TRR technique is introduced and the experimental result is discussed.更多还原