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SOI大截面单模脊形X型分支波导的研制
Fabrication of X Type Crossing Waveguide Structure Constructed by Large Single-Mode Rib SOI Waveguide
【摘要】 报道了硅片直接键合(SDB)SOI大截面单模脊形互型分支波导的研制.对于波长为1.3μm的光,在θ=2°小分支角时,这种分支波导的通道串音小于-20dB,辐射损耗小于0.3dB.直通传输损耗小于0.85dB/cm.
【Abstract】 X type crossing waveguide structures constructed by large single-mode rib SOI(Silicon-on-insulator) waveguide have been fabricated. The SOI structure is formed bySDB (silicon wafer direct bonding) process. When crossing angle of the crossingwaveguides is equal to 2°, their crosstakles is below to-20 dB, their radiation losses isbelow to 0. 3 dB, and their propegstion losses of the direct channels are measured to beapptoximately 0. 85 dB/cm at a wavelength of 1. 3 μm.
【基金】 国家“863”基金,国家教委博士点基金
- 【文献出处】 光学学报 ,ACTA OPTICA SINICA , 编辑部邮箱 ,1994年11期
- 【分类号】TN252
- 【被引频次】3
- 【下载频次】55