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失配应力引起的Ga_xIn_1－xP外延层能带隙的移动

THE EFFECT OF MISMATCH STRAIN ON ENERGY BAND-GAP IN Ga_xIn_1-xP EPITAXIAL LAYERS ON （100） GaAs SUBSTRATES

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【Author】 ZUO Jian; XING Ginyun; LI Fanqing; ZHANG Yunsheng; ZHANG Shuyuan and XU Cunyi(Structure Research Laboratory, University of Science and Technology of China, 230026Hefei)

【机构】中国科学技术大学结构分析开放实验室；

【摘要】本文首次观察了用ＭＯＣＶＤ方法生长的ＧａｘＩｎ１－ｘＰ外延层的能带隙移动，并给出了ＧａｘＩｎ１－ｘＰ外延层光荧光（ＰＬ）峰能量随组分ｘ的变化关系，结果表明ＰＬ是探测混晶组分的简单而有效的方法之一。更多还原

【Abstract】 inter facial elastic strain induced by the lattice parameter mismatch between epilayer and substrate results in significant energy band-gap shift for GaxIn1-xP epitaxial layers.The energy band-gap shift was determined by comparing the photoluminescence peakenergies of the as-grown GaxIn1-xP layer with those from free-standing layer removed fromthe GaAs substrates. We found that photoluminescence is a accurate means to measure composition.更多还原