【摘要】 报道了Ｃ波段单片矢量调制器的设计和制作。采用双栅场效应晶体管（ＤＧＦＥＴ）放大器作为控制器。偏置电路在芯片内。采用集总薄膜电容、电感、电阻作为匹配元件。采用离子注入、背面通孔接地、空气桥跨接等先进工艺技术。描述了ＤＧＦＥＴ器件Ｓ参数的提取步骤。两路放大器和９０°相移网络制作在３．１５ｍｍ×２．５ｍｍ×０．１ｍｍ的芯片上，同相功分器制作在１．６（１．８）ｍｍ×２．９ｍｍ×０．１ｍｍ的芯片上。电路可获得在０～８７°内连续变化的相移量，输出幅度可控。更多还原

【Abstract】 The design, fabrication and characterization of a monolithic vector modulator circuit are described in this paper. Dual-gate FET amplifier is used as a gain-controller. The circuit,which includes all bias circuits on-chip,features ionimplant, thin-film lumped element capacitors, inductors and resistors, air-bridge crossovers and interconnects, and via-hole grounding. This paper also describes a method of extracting dual-gate FET S-parameters from material and structure parametrs. The two DGFET amplifiers and 90° phase shift network are fabricated on a 3. 15 mm× 2. 5 mm× 0.1 mm chip. The in-phase power divider and combiner fabricated on 1. 6(1. 8) mm× 2. 9 mm× 0. 1 mm chips. The vector modulator is capable of continuous phase shift from 0 to 87°. The output amplitude of the vector modulator is controllable.更多还原