节点文献
开路p-n结对近邻光电二极管特性的影响
Influence of an Open Circuit p-n Junction on Characteristics of a Near Photodiode
【摘要】 对p-n结邻近有大面积受光开路p-n结的光电特性进行了理论和实验分析。结果表明,这种结构不能改善光敏器件的灵敏度和探测率,而且由于大面积受光开路p-n结的存在,器件的灵敏度和探测率比相同面的单个p-n结小。
【Abstract】 n this paper, photo-electric characteristics of a p-n junction near a large lightreceiving open circuit p-n junction have been studied on theory and experiments. Results show that the construction can not improve sensitivity and detectivity of photosensitive devices, and that the sensitivity and detectivity of the device are lower than that of single p-n junction with the same area as a result of the large photoreceiving open circuit p-n junction.
【关键词】 光电探测器;
微光探测器;
注入光敏器件;
间接耦合光电探测器;
光敏三极管;
【Key words】 Photodetectors; Microlight-detectors; Injection Photosensitive Devices; Indirect Coupling Photodetectors; Phototransistors;
【Key words】 Photodetectors; Microlight-detectors; Injection Photosensitive Devices; Indirect Coupling Photodetectors; Phototransistors;
- 【文献出处】 固体电子学研究与进展 ,RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS , 编辑部邮箱 ,1994年02期
- 【分类号】TN364.2
- 【被引频次】7
- 【下载频次】45